10-Gb/s operation of an In0.53 Ga0.47 As p-i-n photodiode on metamorphic InGaP buffered semi-insulating GaAs substrate

Journal

IEEE Photonics Technology Letters

Journal Volume

18

Journal Issue

17

Pages

1822-1824

Date Issued

2006

Author(s)

Liao, Y.-S.

Lin, G.-R.

Kuo, H.-C.

Feng, K.-M.

DOI

10.1109/LPT.2006.877623

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/500030

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-33747783918&doi=10.1109%2fLPT.2006.877623&partnerID=40&md5=e384fb411f575c2f880926f74fd897af

Type

journal article