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  4. Synchrotron Radiation X-ray Absorption Spectroscopy Related Studies on SiC and Metal-Doped ZnO
 
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Synchrotron Radiation X-ray Absorption Spectroscopy Related Studies on SiC and Metal-Doped ZnO

Date Issued
2009
Date
2009
Author(s)
Tu, Yi-Li
URI
http://ntur.lib.ntu.edu.tw//handle/246246/188370
Abstract
During the past decade, synchrotron light sources have become indispensable tools for advanced scientific research. Synchrotron light is used widely in basic and applied research throughout the fields of materials science, biology, medicine, physics, chemistry, chemical engineering, geology, archeology, environmental science, energy, electronics, micro-mechanical engineering, and nanotechnology. For this reason synchrotron light sources have been coined "magic lamps of science". his thesis will focus on synchrotron radiation technology studies of semiconductors and heterostructures. It consists of five chapters: in chapter one, we introduce the synchrotron radiation, including the explanation, history, sources, properties, production and applications of synchrotron radiation. In chapter two, the experimental instruments and the theoretical backgrounds have been introduced, including Photoluminescence (PL), Raman scattering, and X-ray absorption spectroscopy (XAS). The data treatment of X-ray absorption spectroscopy is also introduced in chapter two.n chapter three and four, X-ray absorption fine structure has been employed to study the bond length around in Silicon Carbide (SiC) and Magnesium-doped Zinc Oxide (MgZnO). Combined Photoluminescence (PL), Raman scattering and XRD techniques, the influence of different growth temperature and condition on structure could be studied. Therefore, by combining Raman measurement and extended X-ray absorption fine structure (EXAFS) analysis, both techniques can provide complementary information to reveal the change inside the structure caused by different growth condition. In chapter five, Raman spectroscopy combined X-ray photoelectron spectroscopy (XPS), XRD and electrical properties were also used to study the difference of structure in different growth condition of Aluminum-doped Zinc Oxside (Al-ZnO).
Subjects
Silicon Carbide (SiC)
Zinc Oxside (ZnO)
bound length
X-ray Absorption Spectrum
Raman scattering
Photoluminescence
Type
thesis
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