Influences of Template Layer Thickness on Strain Fields and Transition Energies in Self-assembled SiGe/Si Quantum Dots
 

Influences of Template Layer Thickness on Strain Fields and Transition Energies in Self-assembled SiGe/Si Quantum Dots

Resource
Journal of Applied Physics,103(7),073705
Journal
Journal of Applied Physics
Journal Volume
103
Journal Issue
7
Pages
-
Date Issued
2008-04
Date
2008-04
Author(s)
Kuo, M. K.
Lin, T. R.
Hong, K. B.
DOI
URI
Abstract
This paper investigates the influence of thickness of template layer on strain fields and transition energies in lens-shaped self-assembled SiGeSi quantum dots. This study analyzes strain fields in and around quantum dots on the basis of the theory of linear elasticity. Strain fields are then incorporated into the steady-state effective-mass Schrödinger equation. Energy levels and wavefunctions of both electrons and holes are calculated. The calculated results of strain-induced phonon frequency are consistent with previous results obtained by Raman spectroscopy. Moreover, the calculated transition energy agrees well with previous experimental photoluminescence data. Numerical results also suggest that transition energy decreases as the template layer thickness increases. © 2008 American Institute of Physics.
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