Influences of Template Layer Thickness on Strain Fields and Transition Energies in Self-assembled SiGe/Si Quantum Dots

Kuo, M. K.; Lin, T. R.; Hong, K. B.; Kuo, M. K.; Lin, T. R.; Hong, K. B.Kuomk

doi:10.1063/1.2891418

Influences of Template Layer Thickness on Strain Fields and Transition Energies in Self-assembled SiGe/Si Quantum Dots

Resource

Journal of Applied Physics,103(7),073705

Journal

Journal of Applied Physics

Journal Volume

103

Journal Issue

7

Pages

-

Date Issued

2008-04

Date

2008-04

Author(s)

Kuo, M. K.

Lin, T. R.

Hong, K. B.

DOI

10.1063/1.2891418

URI

http://ntur.lib.ntu.edu.tw//handle/246246/175736

Abstract

This paper investigates the influence of thickness of template layer on strain fields and transition energies in lens-shaped self-assembled SiGeSi quantum dots. This study analyzes strain fields in and around quantum dots on the basis of the theory of linear elasticity. Strain fields are then incorporated into the steady-state effective-mass Schrödinger equation. Energy levels and wavefunctions of both electrons and holes are calculated. The calculated results of strain-induced phonon frequency are consistent with previous results obtained by Raman spectroscopy. Moreover, the calculated transition energy agrees well with previous experimental photoluminescence data. Numerical results also suggest that transition energy decreases as the template layer thickness increases. © 2008 American Institute of Physics.

SDGs

[SDGs]SDG7

File(s)

Name

Influences of template layer thickness on strain fields and transition energies in self-assembled SiGe--Si quantum dots.pdf

Size

319.82 KB

Format

Adobe PDF

Checksum

(MD5):98394b86f99bb88fcdfe50206effaad1

Influences of Template Layer Thickness on Strain Fields and Transition Energies in Self-assembled SiGe/Si Quantum Dots

關於 (About)

聯絡資訊 (Contact Us)

相關網站 (Useful Links)

關於開放取用 (Open Access, OA)

出版社期刊論文授權政策 (Copyright)

使用說明 (Instructions)

登入說明 (Sign-in)

匯入著作 (Submission)