Design and Implementation of CMOS Wide-band Amplifiers for Communication Systems
Date Issued
2006
Date
2006
Author(s)
Ling, Chih-Wei
DOI
en-US
Abstract
The thesis introduces the design and implementation of CMOS wide-band low-noise amplifiers (LNAs). These LNAs may be used for various communication systems. Three different types of LNAs are described in this thesis. All of the LNAs are fabricated in 0.18 μm CMOS technology.
The first LNA is designed without any inductor for decreasing a large amount of chip area. It uses noise-canceling technique for low noise figure (NF). Measured small-signal gain is 14.3 dB with bandwidth of 45 MHz to 3.1 GHz. NF is 3.15 to 3.68 dB in 500 MHz to 2 GHz.
The second design is a LNA for 3.1-5 GHz ultra-wideband applications. It uses a casode stage with feedback topology. The load of this amplifier is a special network with inductors, capacitors and a resistor. Measured small-signal gain is 7.7 dB, and bandwidth is 2.8-4.5 GHz.
The last LNA introduced in the thesis is designed for 3.1-10.6 GHz ultra-wideband systems. Main amplifying stages are inverters with feedback resistors. Several inductors are used in certain signal paths to improve circuit performance. Simulation results shows small-signal gain of 10 dB with bandwidth of 0.4-10.7 GHz. Flat NF of 5.5-6.5 dB is achieved in 3.1-10.6 GHz ultra-wideband frequency band.
Subjects
寬頻
放大器
低雜訊放大器
wide-band
amplifiers
LNA
Type
thesis
File(s)![Thumbnail Image]()
Loading...
Name
ntu-95-R91943023-1.pdf
Size
23.31 KB
Format
Adobe PDF
Checksum
(MD5):4bf94ad58313f71624e626ecf3c1d271