Experimental Characterization and Modeling of High Hole Mobility GeSn Quantum Wells: The Role of Alloy Disorder Scattering
Journal
Small Science
Journal Volume
6
Journal Issue
4
Start Page
e202500589
ISSN
2688-4046
Date Issued
2026-03-31
Author(s)
Hutchins‐Delgado, Troy A.
Gangwal, Siddhant
Akwabli, Steven
Bradicich, Adelaide
Petluru, Priyanka
Stanchu, Hryhorii
Acharya, Sudip
Scott, Robin
Rosson, Nick
Povolotskyi, Michael
Tai, Chia‐Tse
Liu, Chia‐You
Lilly, Michael P.
Kuo, Winson C. H.
House, Stephen D.
Vasileska, Dragica
Yu, Shui‐Qing
Lu, Tzu‐Ming
Abstract
Understanding mechanisms influencing electrical transport in material systems not only provides a scientific explanation for observed behavior but also offers insight into ways to enhance transport in devices. This study reports experimental hole mobility of (Formula presented.) in a Ge0.92Sn0.08, the highest recorded mobility for the GeSn system. A study of the material's quality is presented using structural and electrical characterization techniques, with transport data being supported by simulations using an extensive modeling framework. Quantum Hall measurements further indicate the material's high quality and potential spintronic applications, with extracted values of (Formula presented.) and (Formula presented.) for the effective mass and effective g-factor, respectively. It is observed that transport is limited by alloy disorder scattering at cryogenic temperatures. A comparative study between the presented structure and similar quantum well heterostructures revealed that the difference in hole mobilities is captured by a disparity in the reduced nominal alloy disorder scattering potential ((Formula presented.) = 0.8 eV), that is lower than the value of a fully random alloy ((Formula presented.) = 1.4–1.7 eV) potential. The difference in (Formula presented.) suggests that heterostructures with similar geometries and alloy compositions can have different alloy disorder scattering, implying that an underlying mechanism, such as short-range order, may be responsible and warrants further investigation.
Subjects
alloy disorder scattering
GeSn quantum wells
high mobility
modeling and simulation
quantum hall
Publisher
Wiley
Type
journal article