The AIGaAS/GaAS ridge waveguide laser array
Journal
Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an
Journal Volume
11
Journal Issue
3
Pages
261-267
Date Issued
1988
Author(s)
Suen, L.-C.
Abstract
The single transverse mode AIGaAs/GaAs laser array with pulsed peak power up to lOOmW has been fabricated successfully. The ridge waveguide laser structure was chosen since it needs only one step liquid phase epitaxy which greatly improves the yield. The ridge waveguide was formed by etching the top p-type cladding layer through a 4/im to 5, um mask down to the neighborhood of the active layer to form a lateral refraction index difference. It is found that when the spacing between ridge is 5 fim, individual lasers are not coupled, and the far field pattern displays a diverged single lobe with a half width of 18° similar to that of a single laser. When an end broad area region is inserted, however, the laser array starts to couple and forms a narrow two-lobe beam with a half width of 5°. The near-field pattern can be used to analyze the coupling condition. © 1988 Taylor and Francis Group, LLC.
Type
journal article