Cavity enhanced 1.5 um LED with silicon as hole injector
Journal
SPIE Photonics West
Journal Volume
9767
Pages
503-538
Date Issued
2016
Author(s)
D. Liu
Z. Xia
S. Cho
D. Zhao
H. Zhang
T. Chang
X. Yin
M. Kim
J. Seo
J. Lee
X. Wang
W. Zhou
Z. Ma
Abstract
Here we report the demonstration of a Si/InAlGaAs/InP PIN cavity enhanced LED around 1.5 um by using membrane transfer method. The silicon layer is acting not only as the optical guiding layer but also the hole injection layer. The new hybrid integrated LED could be further developed as laser source for silicon photonics.
SDGs
Type
conference paper