Enhanced optical emission from GaN films grown on a silicon substrate
Resource
Appl. Phys. Lett.,74,1984-1987.
Journal
Applied Physics Letters
Pages
1984-1986
Date Issued
1999-01
Date
1999-01
Author(s)
Zhang, Xiong
Chua, Soo-Jin
Li, Peng
Chong, Kok-Boon
Feng, Zhe-Chuan
Abstract
GaN films were grown on a silicon wafer by metallorganic chemical vapor deposition. The substrate was composed of composite intermediate layers of ultrathin amorphous silicon films and a GaN/AlGaN multilayered buffer. The enhanced optical emission characteristics and crystallinity of the samples were determined by photoluminescence and X-ray diffraction spectroscopy.
Type
journal article