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College of Engineering / 工學院
Materials Science and Engineering / 材料科學與工程學系
Band offsets and charge storage characteristics of atomic layer deposited high- k Hf O<inf>2</inf> Ti O<inf>2</inf> multilayers
Details
Band offsets and charge storage characteristics of atomic layer deposited high- k Hf O2 Ti O2 multilayers
Journal
Applied Physics Letters
Journal Volume
90
Journal Issue
26
Date Issued
2007
Author(s)
Maikap, S.
Wang, T.-Y.
Tzeng, P.-J.
Lin, C.-H.
Tien, T.C.
Lee, L.S.
Yang, J.-R.
Tsai, M.-J.
JER-REN YANG
DOI
10.1063/1.2751579
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/491629
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-34547296613&doi=10.1063%2f1.2751579&partnerID=40&md5=8d65213fcd662eac8223b1550f32d4a2
Type
journal article