Reduced QCSE in InGaN-based LEDs by patterned sapphire substrates with enlarging the diameter of hexagonal hole
Journal
Proceedings of SPIE - The International Society for Optical Engineering
Journal Volume
9519
Date Issued
2015
Author(s)
CHIEH-HSIUNG KUAN
Chen, Y.-P.
Su, V.
Lee, M.-L.
You, Y.-H.
Chen, P.-H.
Lin, R.-M.
CHIEH-HSIUNG KUAN
Abstract
This paper reports the growths of InGaN-based light-emitting diodes (LEDs) on the patterned sapphire substrates (PSSs) with enlarging the diameter of hexagonal hole can reduce the related quantum-confined Stark effect (QCSE) within multiple-quantum wells (MQWs), resulting in that the PL relative intensity is enhanced by up to 95% as compared to the conventional one.
Type
conference paper