Reliability and Stability of Electro-Optical semiconductor Device
Date Issued
2007
Date
2007
Author(s)
Lin, Tzu-Pu
DOI
zh-TW
Abstract
Firstly, silicon based thin film transistors are commonly used in active-matrix
LCD’s (AMLCD’s) as pixel switches or drivers. However, the performance of
conventional TFT is far from satisfactory to meet the high speed and current drive
requirements for the application of LCD. In recent years, a lot of efforts have been
spent to improve the processes and devices structures of TFTs to obtain better
performance. Finding new materials, such as ZnO.
The Si-based TFTs have several deficiencies, such as low electron mobility、
opaque and high temperature process. The ZnO is a new material has the high
mobility and crystalloid. In this research, a room temperature process method is
proposed to obtain high quality ZnO thin films for TFTs. By changing the process
conditions, and measurement the electrical property shift with time. We want to
obtain the reliability and stability and to analysis the mechanism.
Subjects
氧化鋅
薄膜電晶體
可靠度
穩定度
ZnO
TFT
reliability
stability
Type
thesis
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