3D structural construction of GaN-based light-emitting diode by confocal micro-Raman spectroscopy
Journal
Proceedings of SPIE - The International Society for Optical Engineering
Journal Volume
9768
ISBN
9781510600034
Date Issued
2016
Author(s)
Abstract
The key issue for light emission strength of GaN-based LEDs is the high defect density and strain in MQWs causing the electric polarization fields. In this work, we construct 3D confocal microspectroscopy to clarify strain distribution and the relationship between photoluminescence (PL) intensity and pattern sapphire substrate (PSS). From 3D construction of E2high Raman and PL mapping, the dislocation in MQW can be traced to the cone tip of PSS and the difference in E2high Raman mapping between substrate and surface is also measured. The ability to measure strain change in 3D structure nondestructively can be applied to explore many structural problems of GaN-based optoelectronic devices.
SDGs
Publisher
SPIE
Type
conference paper