Structure Asymmetry Effects in the Optical Gain of Piezostrained InGaN Quantum Wells
Resource
IEEE Journal of Selected Topics in Quantum Electronics 5 (3): 756-764
Journal
IEEE Journal on Selected Topics in Quantum Electronics
Journal Volume
5
Journal Issue
3
Pages
756-764
Date Issued
1999
Date
1999
Author(s)
Abstract
We investigate the effects of structural asymmetry on the electronic and optical properties of indium gallium nitride (InGaN) quantum wells (QW's). Using a pulsed current excitation technique, spectral blue shift as large as 80 meV is observed in a strained 3.0-nm In0.2Ga0.8N QW as the pulsed current increases from 1 mA to 1A. Based on a self-consistent calculation, we are able to quantify a gain competition process among the interactions of piezoelectricity, many-body, charge screening, and band filling effects. Such interactions are shown to provide a mechanism for shaping the QW confined potential such that superior carrier confinement and charge screening of the piezoelectric field can be obtained in the asymmetric InGaN QW. At high carrier injection of Ninj > 2 × 1019 cm-3, a tenfold increase in the TE-polarized optical gain can be achieved by using the asymmetric GaN-InGaN-AlGaN QW instead of the symmetric InGaN-AlGaN QW. Due to the diminishing of piezoelectricity-induced quantum-confined Stark effect, the calculated optical gain spectra of the asymmetric InGaN QW exhibit a spectral blue shift with respect to those of the symmetric InGaN QW.
Other Subjects
Carrier mobility; Crystal symmetry; Electric current measurement; Electric currents; Electric excitation; Electronic properties; Gain measurement; Optical properties; Piezoelectricity; Semiconducting indium compounds; Spectrum analysis; Strain; Band filling effects; Carrier confinement; Carrier injection; Charge screening effects; Many body effects; Optical gain; Piezostrained quantum wells; Pulsed current excitation; Semiconducting indium gallium nitride; Structure asymmetry effects; Semiconductor quantum wells
Type
journal article
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