Monolithic integration of GaN-based lightemitting diodes and metal-oxide-semiconductor field-effect transistors
Journal
Optics Express
Journal Volume
22
Journal Issue
21
Date Issued
2014
Author(s)
Lee, Y.-J.
Yang, Z.-P.
Chen, P.-G.
Hsieh, Y.-A.
Yao, Y.-C.
Liao, M.-H.
Lee, M.-H.
Wang, M.-T.
Hwang, J.-M.
Abstract
In this study, we report a novel monolithically integrated GaNbased light-emitting diode (LED) with metal-oxide-semiconductor fieldeffect transistor (MOSFET). Without additionally introducing complicated epitaxial structures for transistors, the MOSFET is directly fabricated on the exposed n-type GaN layer of the LED after dry etching, and serially connected to the LED through standard semiconductor-manufacturing technologies. Such monolithically integrated LED/MOSFET device is able to circumvent undesirable issues that might be faced by other kinds of integration schemes by growing a transistor on an LED or vice versa. For the performances of resulting device, our monolithically integrated LED/MOSFET device exhibits good characteristics in the modulation of gate voltage and good capability of driving injected current, which are essential for the important applications such as smart lighting, interconnection, and optical communication.
SDGs
Type
journal article