Prospects for Ferroelectric HfZrOx FETs with Experimentally CET=0.98nm,SSfor=42mV/dec, SSrev=28mV/dec, Switch-OFF <0.2V, and Hysteresis-Free Strategies
Journal
IEEE Electron Device Meeting (IEDM) 2015
Date Issued
2015
Author(s)
M. H. Lee
Description
美國華盛頓
Type
conference paper