InP-based MSM-HEMT receiver OEIC's for long-wavelength lightwave systems
Journal
Proceedings of SPIE - The International Society for Optical Engineering
Journal Volume
1582
Pages
134-144
Date Issued
1991
Author(s)
Abstract
This paper reviews the recent progress in researching a planar receiver OEIC technology utilizing InGaAs MSM photodetectors and InAlAs/InGaAs HEMT amplifiers. The epitaxial materials have been grown by the low-pressure OMCVD technique on patterned InP substrates. This planar integration process has been used to address a number of different system needs. These include a balanced dual detector receiver for coherent detection, a trans-impedance amplifier receiver with a planar detector and waveguide integrated detector for direct detection, and a electronically-switched fourchannel receiver for wavelength-division-multiplexing based lightwave systems. This MSM-HEMT OEIC technology represents a major advance towards achieving high-performance and low-cost components for long-wavelength lightwave systems. © 1991 SPIE. All rights reserved.
Other Subjects
Aluminum alloys; Gallium alloys; Gallium compounds; III-V semiconductors; Indium phosphide; Photodetectors; Semiconducting indium gallium arsenide; Semiconducting indium phosphide; Semiconductor alloys; Coherent detection; Direct detection; Epitaxial materials; Integrated detectors; Lightwave systems; MSM photodetector; Planar integrations; Trans impedances; Integrated optoelectronics
Type
conference paper