Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

Journal

Nanoscale Research Letters

Journal Volume

11

Journal Issue

1

Date Issued

2016

Author(s)

Shih, H.-Y.

Chu, F.-C.

Das, A.

Lee, C.-Y.

Chen, M.-J.

Lin, R.-M.

DOI

10.1186/s11671-016-1448-z

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/491732

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-84964866997&doi=10.1186%2fs11671-016-1448-z&partnerID=40&md5=3ceec6a9419e8b798b3617f95f8694b1

SDGs

[SDGs]SDG7

Type

journal article