A 206 ? 220 GHz CMOS VCO using body-bias technique for frequency tuning
Journal
2015 IEEE MTT-S International Microwave Symposium, IMS 2015
Date Issued
2015
Author(s)
Chiang, P.-H.
Cheng, J.-H.
Wu, Y.-C.
Chiong, C.-C.
Liu, W.-D.
Huang, G.-W.
Huang, T.-W.
Abstract
A 206 ∼ 220 GHz varactor-free voltage-controlled oscillator (VCO) is proposed to improve the output power and tuning range. The topology of the VCO is push-push crosscoupled pair. By using body-bias technique, the parasitic capacitor of the cross-coupled pair can be adjusted, and the varactors in the conventional VCO design can be removed. The proposed VCO was designed and implemented in TSMC 65-nm CMOS technology with a chip size of 0.25 × 0.25 mm2. The tuning range is 6.6% (from 206.2 to 220 GHz). The measured phase noise is -66 dBc/Hz at 1 MHz offset frequency. The output power is 1.3 dBm at 216 GHz with 54-mW dc power consumption and its maximum dc-to-RF efficiency is 2.1%. To the best of our knowledge, this varactor-free VCO achieves the highest dc-to-RF efficiency among published CMOS VCOs around 200 GHz. © 2015 IEEE.
SDGs
Other Subjects
Bias voltage; Circuit oscillations; CMOS integrated circuits; Energy efficiency; Oscillistors; Phase noise; Varactors; Body bias; CMOS technology; Cross-coupled; DC power consumption; Frequency-tuning; Offset frequencies; Parasitic capacitors; Tuning ranges; Variable frequency oscillators
Type
conference paper