Fabrication and Characterization of AlGaN/GaN High Electron Mobility Field Effect Transistor

Date Issued

2007

Date

2007

Author(s)

Chin, Yin-Shuan

DOI

zh-TW

URI

Abstract

Abstract We investigate methods of improving the electric properties of AlGaN/GaN field effect transistor (FET). An ohmic contact resistance of 0.47

Subjects

歐姆接觸

歐姆掘入

AlGaN/GaN HEMT

Ohmic contact

Ohmic digging

Type

thesis

File(s)

Name

ntu-96-J94941018-1.pdf

Size

23.31 KB

Format

Adobe PDF

Checksum

(MD5):eaab4d1ba0c28b7f30a669da93cd9329