半導體關鍵設備研發-子計畫二﹕ 0.35:m 或更高技術之單晶圓化學氣相沉積反應器( I )
Date Issued
1998-07-31
Date
1998-07-31
Author(s)
DOI
872218E002005
Abstract
First, we will address issues of the photon
intensity distribution and the power
consumption by a simplified radiation thermal
model. Based on heat conduction
equation, the transient and steady state
non-uniformity of temperature on the wafer
edge can be predicted. Beside we develop
a set of small signal model to make
heat conduction equation linear, also
can predict the transient lifetime. The wafer
emissivity is exactly modeled. We
can make temperature measurement with
emissivity correction. A new temperature
measurement technique has been developed.
A grating is fabricated on Si wafer
by laser ablation. Measuring the grating
periods can indicate the corresponding
temperature by optical diffraction
method. Finally, we make the comparison
the specification of every vendor and
by previous study to design a 8” RTP
machine.
Publisher
臺北市：國立臺灣大學電機工程學系暨研究所
Type
report
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