Simulation and Correction of Angular Defects in Two-Photon Lithography
Resource
JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 24(6), 651 -655
Journal
Journal of Photopolymer Science and Technology
Pages
651-655
Date Issued
2011
Date
2011
Author(s)
Lin, Chin-Te
Fan, Hsu
Bouriau, Michel
Liao, Chao-Yaug
Lin, Chih-Lang
Masclet, Cedric
Leon, Jean-Claude
Baldeck, Patrice L.
Abstract
In two-photon lithography a high repetition rate laser scans through calculated trajectories in order to induce polymerization in the resin which give rise to complex microstructures. When there are sharp angles within trajectories, the polymerized resin at angles receives more energy from the laser. The polymerized structure becomes larger, and the produced shape gets over-exposure defects. Here we have modeled over exposure defects using numerical simulations and suggested an analytical expression to calculate the correcting coefficients for adjusting laser power. We have demonstrated over exposure defect of free angular structures using this laser power correction. ©2011CPST.
SDGs
Type
journal article
File(s)![Thumbnail Image]()
Loading...
Name
303.pdf
Size
23.47 KB
Format
Adobe PDF
Checksum
(MD5):3fc5036267ed12be7532a5cad362083e