Direct determination of atomic structure in multiple quantum wells InGaN/GaN
Journal
Applied Physics Letters
Journal Volume
80
Journal Issue
5
Pages
761-762
Date Issued
2002
Author(s)
Abstract
We present an analysis of a homogeneous cellular interface between ultrathin InGaN and GaN layers in a high-resolution high-angle annular dark field scanning transmission electron microscopy image processed by the deconvolution technique. The method provides high-quality atomic-resolved images uniquely from the experimental images without preassumed models and image simulations. The processed image, then, shows definitely the position of interface between InGaN and GaN layers at atomic scale and an evidence of coherent epitaxial growth. © 2002 American Institute of Physics.
SDGs
Type
journal article