Structure and formation mechanism of V defects in multiple InGaN/GaN quantum well layers

Resource

Journal of Applied Physics 99: 073505

Journal

Journal of Applied Physics 99:

Journal Issue

073505

Pages

-

Date Issued

2006

Date

2006

Author(s)

Shiojiri, M.

Chuo, C. C.

Hsu, J. T.

Yang, J. R.

Saijo, H.

URI

Type

journal article

File(s)

Name

20.pdf

Size

575.04 KB

Format

Adobe PDF

Checksum

(MD5):64b29f9084a759d7ec077290334dff3d