Radiation hardness studies of VCSELs and PINs for the opto-links of the Atlas SemiConductor Tracker
Journal
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Journal Volume
579
Journal Issue
2 SPEC. ISS.
Pages
795-800
Date Issued
2007
Author(s)
Abstract
We study the radiation hardness of the Vertical Cavity Surface Emitting Laser diodes (VCSELs) and the epitaxial silicon PIN diodes that will be used for the Atlas SemiConductor Tracker at the CERN Large Hadron Collider. The tests were conducted with 200 MeV protons to a fluence of 4 × 1014 p / cm2 and with 20 MeV (average energy) neutrons to 7.7 × 1014 n / cm2. The radiation damage of the VCSELs and PINs and the annealing characteristics are presented. © 2007 Elsevier B.V. All rights reserved.
SDGs
Type
journal article