Schottky enhancement of contacts to n-GaAs via the exchange mechanism using NiAlxGa1-x as a metallization

Resource

Journal of Vacuum Science & Technology,B17(2),432-442.

Journal

Journal of Vacuum Science & Technology

Journal Issue

2

Pages

432-442

Date Issued

1999-03

Date

1999-03

Author(s)

Chen, C. P.

Lin, C. F.

Swenson, D.

Kao, C. R.

Jan, C. H.

Chang, and Y. A.

URI

Type

journal article