Properties of photoluminescence in type-II ZnMnSe/ZnSeTe multiple quantum wells
Journal
Applied Physics Letters
Journal Volume
85
Journal Issue
13
Pages
2544-2546
Date Issued
2004
Author(s)
Lin, C.M.
Abstract
The optical properties of photoluminescence of type-II ZnMnSe/ZnSeTe multiple quantum wells by photoluminescence (PL) measurement were investigated. The type-II were grown on GaAs substrates by an Applied EPI 620 molecular beam epitaxy system. A ZnSe buffer layer of 220 nm was grown before the type-II Multiple Quantum Wells (MQW) were deposited. A giantblueshift was observed at the peak position of PL spectra under a moderate optical excitation level.
Type
journal article