Research on Key Components for Microwave and Millimeter-Wave Wideband Systems
Date Issued
2004
Date
2004
Author(s)
Liu, Ren-Chieh
DOI
en-US
Abstract
Circuits with cost efficiency, flat frequency response and high frequency are required in wideband systems, such as optical communcation, ultra-wide band (UWB) communication and the radio astronomy telescope. The designs of such circuits become important research topics recently. This dissertation includes the design methodology and implementation of microwave distributed amplifiers and VCOs, together with device modeling and EM simulation of spiral inductors.
To predict the circuit performance, HEMT and CMOS device models used in the designs are described. The device models contain the extrinsic elements, intrinsic elements and noise contribution. To take account of the effect of the lossy substrate, the substrate parameters were included in the CMOS models. In addition, EM simulation of the spiral inductors on the silicon substrate is discussed.
The basic operation and fundamental principles of the conventional distributed amplifier is reviewed. The noise and power performances of the distributed amplifier are also discussed. Then a distributed amplifier using a PHEMT process is designed to investigate the design equation. This PHEMT distributed amplifier presented low noise figure and high output power with low power consumption.
To enhance the gain and bandwidth performance, CMOS distributed amplifiers using the cascode topology and m-derived matching sections are proposed. The design and analysis of the CMOS cascode distributed amplifiers are included. The CMOS cascode distributed amplifiers presents good gain and bandwidth performances and demonstrates the highest gain GBW (gain bandwidth product) per dc power efficiency for amplifiers using standard CMOS processes to date. with the recently published results. Furthermore, the cascode distributed topology is used to design the wideband low-noise CMOS transimpedance amplifiers.
Finally, to achieve high operation frequency and high output power with miniature chip size, a CMOS cross-coupled push-push VCO is proposed. The phase noise analysis of the cross-coupled push-push VCO are presented. This VCO achieves the first CMOS VCO with output frequency higher than the device fMAX(maximum oscillation frequency). It also demonstrates the highest output power without any output amplifier and widest tuning range with comparable phase noise for millimeter-wave VCOs using bulk CMOS processes.
Subjects
積體電路
壓控振盪器
分散式放大器
MMIC
DA
VCO
Type
thesis
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