Suppression of Current Collapse in Enhancement Mode GaN-Based HEMTs Using an AlGaN/GaN/AlGaN Double Heterostructure
Journal
IEEE Transactions on Electron Devices
Journal Volume
64
Pages
55-64
Date Issued
2017
Author(s)
Abstract
Current collapse is a phenomenon that increases the channel resistance during the switching process when the high gate and drain voltages are applied. The effect can be found from GaN-based high-electron mobility transistors (HEMTs) and is an obstacle for their applications to power electronics. There have been numerous reports on suppressing current collapse using semiconductor process technologies. In this paper, an enhancement mode (E-mode) AlGaN/GaN/AlGaN double heterostructure was proposed. The current collapse phenomena were studied on devices of E-mode MIS and Schottky gate HEMTs. The results indicate the suppression of current collapse for devices with double heterostructure.
Type
journal article