Photoluminescence Spectrum and Raman Spectroscopy of GaN Nano-structure

In this paper, a practical process to fabricate InGaN/GaN p-i(MQW (multiple quantum well))-n nanorod structures is demonstrated. By using silica nanoparticles as the etch mask and inductively coupled plasma reactive ion etching (ICP-RIE) to define the pattern, nanorods with diameter 100nm can be fabricated over the entire 2 inch wafer. The photoluminescence (PL) spectra of the InGaN/GaN MQW nanorod structures are investigated at room and low temperatures. The discrete density of state is observed at temperature lower than 60k.he Raman spectroscopy is performed on nanorod structure too. We have analysised the strain in the nanorod structure array and compare the result with our PL spectrum and EL spectrum.urthermore, we also fabricate nanorod LEDs using a polymer planarization approach to deposit p-type electrodes on the tips of nanorods. Current-voltage curves and electroluminescent (EL) results are demonstrated.