Study of the Nickel Silicide Formation by Utilizing Rapid Thermal Annealing and Laser Induced Annealing Processes and its Application to the Photo Detector
Date Issued
2007
Date
2007
Author(s)
Lee, Cheng-Yu
DOI
zh-TW
Abstract
Nickel silicide has been widely used as gate materials of transistor in integrated circuit processes for the reduction of interconnection resistance. In this thesis, we will provide a novel application of nickel silicide on photo detector. We will divide this research into three parts to expound our concept. Firstly, we utilize different annealing processes to form nickel silicide. Secondly, we apply thin film theory to obtain optical constant of nickel silicide in visible, deep ultraviolet light and vacuum ultraviolet regimes and design antireflection structures for nickel silicide. Then, we show the feasible application of nickel silicide on photo detector and design the so-called photo gate MOS transistor to do further study in the future work.
We utilized rapid thermal annealing (RTA) and laser induced annealing (LIA) processes to form nickel silicide and discussed the role of amorphous silicon in annealing process. By utilizing the laser induced annealing process with phase mask, we demonstrate a novel silicide patterning technique, which is different from salicide process used in present semiconductor fabricated process. With this technique one can use a deep ultraviolet lithography exposure tool to form and pattern silicide locally and rapidly.
Because both refractive index and extinction coefficient of nickel silicide film are large, using optical thin film stacks, which compatible with semiconductor fabricated processes can not obtain acceptable antireflection effect. We utilized optical thin film stacks combining with pyramid structures could further reduce reflection from 53% to 0.07%.
When nickel silicide is formed on silicon substrate, there is a Schottky barrier between silicon and nickel silicide. We utilized a simple diode to prove this Schottky barrier can be served as electron-hole pair generated center and further combining pyramid antireflection structure on it to verify this structure can gain more photocurrent. By this concept, we design a photo MOS transistor which can be turn on only by illumination instead applying voltage on gate.
Subjects
矽化鎳
光偵測器
抗反射層
快速熱退火
準分子雷射
相位光罩
NiSi
silicide
photo detector
RTA
Excimer laser
phase mask
Type
thesis
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