First Demonstration of Fluorine Supercritical Fluid Passivated 2-floor GAA In 2 O 3 Nanosheets Achieving Positive 0.7 V V T , 67 mV/dec SS, 1309 μA/ μm I D,max , Record 47 mV PBS, and Negligible NBS
Journal
Technical Digest - International Electron Devices Meeting, IEDM
Start Page
1
End Page
4
ISSN
01631918
ISBN (of the container)
979-833156785-9
Date Issued
2026-01-30
Author(s)
Ma, Rong-Wei
Liu, Yuan-Ming
Gracia, Johannes
Kuo, Chuan-Wei
Sung, Hsien-Ming
Fujiwara, Hidenari
Chang, Ting-Chang
Abstract
2-floor gate-all-around (GAA) In2O3 nanosheets are passivated by fluorine supercritical fluid (F-SCF) at 200oC. The device achieves a subthreshold swing (SS) of 67 mV/dec, a threshold voltage (VT) of 0.7 V, and a high ID,max of 130μA/μm at VDS= 3 V/ Vov=2.3 V. F-SCF enables conformal and non-destructive defect passivation, improving electrical characteristics and reliability. Positive bias stress (PBS) has a record low ΔVT of 47 mV at VOV=3 V after 8000 s among oxide semiconductor (OS) GAA devices. With minimal hydrogen content in gate dielectrics, no ΔVT is observed after negative bias stress (NBS). X-ray photoelectron spectroscopy (XPS) and Atomic Force Microscopy (AFM) confirm F incorporation and intact channel roughness. The compatibility of F-SCF with 3D stacked OS devices has great potential for BEOL transistor applications.
Event(s)
2025 IEEE International Electron Devices Meeting, IEDM 2025
Publisher
IEEE
Type
conference paper