A 50 to 94-GHz CMOS SPDT Switch Using Traveling-Wave Concept
Journal
IEEE Microwave and Wireless Components Letters
Journal Volume
17
Journal Issue
2
Pages
130--132
Date Issued
2007-02
Author(s)
Abstract
A fully integrated single-pole-double-throw transmit/receive switch has been designed and fabricated in standard bulk 90-nm complementary metal-oxide semiconductor (CMOS) technology. Traveling wave concept was used to minimize the insertion loss at higher frequency and widen the operating bandwidth. The switch exhibits a measured insertion loss of 2.7 -dB, an input 1-dB compression point (input P1 dB) of 15 dBm, and a 29-dB isolation at the center frequency of 77 GHz. The total chip size is only 0.57 × 0.42 mm 2 including all testing pads. To our knowledge, this is the first CMOS switch demonstrated beyond 50 GHz, and the performances rival those monolithic microwave integrated circuit switches using standard GaAs PHEMTs. © 2007 IEEE.
SDGs
Type
journal article