Growth and electron effective mass measurements of strained Si and Si0.94Ge0.06 on relaxed Si0.62Ge0.38 buffers grown by rapid thermal chemical vapor deposition

Resource

Materials Chemistry and Physics 49 (1): 29-32

Journal

Materials Chemistry and Physics

Journal Volume

49

Journal Issue

1

Pages

29-32

Date Issued

1997

Date

1997

Author(s)

Liu, C.W.

Venkataraman, V.

URI

Type

journal article

File(s)

Name

03.pdf

Size

503.51 KB

Format

Adobe PDF

Checksum

(MD5):415911d28f7cb87b844b7dc58f3578ff