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  4. Defect effect on electrical transport of multiwalled carbon nanotubes
 
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Defect effect on electrical transport of multiwalled carbon nanotubes

Journal
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Journal Volume
44
Journal Issue
6A
Pages
4245-4247
Date Issued
2005
Author(s)
Hsiou Y.-F
Chen C
Chan C.-H
Stobinski L
YING-JAY YANG  
DOI
10.1143/JJAP.44.4245
URI
https://www.scopus.com/inward/record.uri?eid=2-s2.0-23944520802&doi=10.1143%2fJJAP.44.4245&partnerID=40&md5=f6e3c4bd1a59180fd150b3504c34ae63
https://scholars.lib.ntu.edu.tw/handle/123456789/632261
Abstract
The low-temperature transport properties of individual multiwalled carbon nanotubes are investigated at low temperatures using the multiple-probe technique. A low-ohmic contact between an electrode and a tube is prepared to prevent the influence of contact. Measurements using two- and four-probe techniques show Coulomb oscillations with nearly the same periods, indicating that the tunneling barriers are inside the tubes between each pair of electrodes. The experiment and the theoretical simulation suggest the existence of local barriers being responsible for the formation of a chain of weakly coupled islands and for the observed Coulomb blockade characteristics. © 2005 The Japan Society of Applied Physics.
Subjects
Carbon nanotube; Coulomb blockade; Defect; Multiwalled carbon nanotube; Tunneling barriers
SDGs

[SDGs]SDG14

Other Subjects
Computer simulation; Coulomb blockade; Defects; Electrodes; Electron tunneling; Transport properties; Low temperatures; Low-ohmic contact; Multiwalled carbon nanotubes; Tunneling n\barriers; Carbon nanotubes
Type
journal article

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