Non-volatile transistor memory devices using charge storage cross-linked core-shell nanoparticles

Journal
Chemical Communications
Journal Volume
52
Journal Issue
45
Pages
7269-7272
Date Issued
2016
Author(s)
Lo, C.-T.
Watanabe, Y.
Oya, H.
Nakabayashi, K.
Mori, H.
DOI
URI
Abstract
Solution processable cross-linked core-shell poly[poly(ethylene glycol)methylether methacrylate]-block-poly(2,5-dibromo-3-vinylthiophene) (poly(PEGMA)m-b-poly(DB3VT)n) nanoparticles are firstly explored as charge storage materials for transistor-type memory devices owing to their efficient and controllable ability in electric charge transfer and trapping.
SDGs

[SDGs]SDG7

Type
journal article

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