Temperature-dependent optical properties of In0.34 Ga0.66 As1 - x Nx / GaAs single quantum well with high nitrogen content for 1.55 μ m application grown by molecular beam epitaxy
Journal
Journal of Crystal Growth
Journal Volume
291
Journal Issue
1
Pages
27-33
Date Issued
2006
Author(s)
Lai, F.-I.
Kuo, S.Y.
Wang, J.S.
Hsiao, R.S.
Kuo, H.C.
Chi, J.
Wang, S.C.
Wang, H.S.
Type
journal article