A Novel 4H-SiC Edge Termination Structure Using Double-Implanted P-Well and N+
Part Of
10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026
ISBN (of the container)
9798331585983
ISBN
9798331585983
Date Issued
2026
Author(s)
Abstract
This work proposes and validates a novel DIPN (Double-Implanted P-well and N+) edge termination for 1.7 kV-class 4H-SiC power devices. TCAD simulated and measured results demonstrate that inserting shallow N+ regions inside each P-well ring forms a multi-peak electric-field profile, effectively reducing the surface electric field and enhancing breakdown voltage. Both experimental and simulated results show breakdown voltages above 2 kV across nearly 40% P-well dose variation, confirming excellent process tolerance. DIPN combines high breakdown capability, reduced surface field, and process simplicity, making it a practical solution for high-voltage SiC devices.
Event(s)
10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026, 1 March 2026 - 4 March 2026, Penang
Subjects
Edge termination
RESURF
SiC MOSFET
Publisher
Institute of Electrical and Electronics Engineers Inc.
Type
conference paper