Process simulation of pulsed laser annealing on epitaxial Ge on Si
Journal
ECS Journal of Solid State Science and Technology
Journal Volume
6
Journal Issue
8
Date Issued
2017
Author(s)
Abstract
Using a 3D numerical method, temperatures of pulsed laser annealed epi-Ge layers on SOI and bulk Si substrates are simulated. Epi-Ge is phosphorus-doped by in-situ chemical vapor deposition doping. Both the simulated melt depth and the measured sheet electron density of epi-Ge increases as the laser fluence increases. A strong positive correlation is observed between the simulated melt depth of epi-Ge and the measured sheet electron density. The sheet electron density is calculated using the temperature-dependent solid solubility, while the electron concentration for epi-Ge melted during pulsed laser annealing is assumed to be the liquid solubility of phosphorus at melting point. An intermixing between Ge and Si is observed by cross-sectional transmission electron microscopy, when both Si and epi-Ge are melted in the simulation. ? 2017 The Electrochemical Society. All rights reserved.
Subjects
Annealing; Carrier concentration; Chemical vapor deposition; Electron density measurement; Electrons; Germanium; Germanium compounds; High resolution transmission electron microscopy; Numerical methods; Phosphorus; Silicon; Solubility; Transmission electron microscopy; Cross sectional transmission electron microscopy; Electron concentration; Positive correlations; Process simulations; Pulsed laser annealing; Sheet electron density; Solid solubilities; Temperature dependent; Pulsed lasers
SDGs
Type
journal article