Temperature-Dependent Characterization of 850 nm High-Speed Vertical-Cavity Surface-Emitting Lasers
Date Issued
2015
Date
2015
Author(s)
Wu, Yun-Chen
Abstract
The thesis focus on discussion of the characterization of the infrared 850 nm Vertical Cavity Surface Emitting Laser, including the layer structure design, process flow design, high temperature optical and electrical DC characterization, high temperature optical modulation characterization, small-signal model establishment and analysis, and modulation speed improvement form layer structure and process design. In Chapter one, the advantages of the optical communication and the background of the VCSEL will be introduced, then we discuss the application of the 850 nm VCSEL and the research motivation. In the Chapter two, first we will discuss the fundamental physics of the laser. Then, we research the layer structure, process flow, and high temperature DC characterization. We focus on the quantum well and cavity design of the layer structure, then introduce the fabrication of the VCSEL. In the last, we measure the DC characterization of the fabricated VCSELs with aperture diameter 5 μm、7 μm、9 μm、11 μm temperature ranging from 25 ℃ to 85 ℃ at 20 ℃ interval, and analyze the L-I-V curve, L-J-V cure, optical spectrum, and the temperature stability of the DC characterization. In Chapter there, we establish the small-signal model, including the parasitic electrical circuit model and physical intrinsic laser model. The electrical parameters in the circuit and the extraction method will be introduced. Then we derivate the laser intrinsic transfer function by rate equation, and recognize the meaning of the physical parameters and extraction method. In the Chapter four, we will analyze the modulation ability of the VCSELs with aperture diameter 7 μm、9 μm、11 μm temperature ranging from 25℃ to 85℃ at 20℃ interval, and put emphasis on the discussion of the modulation speed and energy-efficient ability. Then, we put the devices on the eye diagram and bit error rate test. At last, the small-signal parameters of the devices with aperture diameter 7 μm、9 μm、11 μm bias at 3, 6, 9 mA temperature ranging from 25 ℃ to 85 ℃ at 20 ℃ interval are extracted. Then, we analyze the modulation speed limitation by three aspects including thermal effect, damping effect, parasitic effect. At last but not least, we discuss how to improve the modulation speed by optimization of the layer structure and process flow.
Subjects
Cavity
Modulation
Optical Device
Small Signal Model
Transfer Function
Type
thesis
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