Investigation on the Characteristics and Applications of Quantum-Dot Laser Diodes
Date Issued
2006
Date
2006
Author(s)
Ho, Yi
DOI
zh-TW
Abstract
The thesis is focused on the investigation on the characteristics and applications of InAs quantum-dot laser diodes. In quantum-dot laser diodes, carrier capture that is limited by phonon bottleneck effect has significant influence on the application of electro-optical devices. In order to obtain more microscopic information about carrier dynamics, in this thesis, many phenomena are explored such as the electro-luminescence spectrum at variant temperatures, carrier capture, phonon bottleneck and consequential non-equilibrium Fermi-Dirac distribution. The above phenomena can give us microscopic information such as Auger recombination and electron-phonon scattering. By curve fitting, the main reason of nonradiative recombination can be proved as electron-LA phonon scattering, and carrier capture as electron-LO phonon scattering which has evident influence to optical gain spectrum in InAs quantum dot. In quantum dots, carrier scattering is much more limited than in bulk. In order to model the influence of size distribution to gain spectrum, “energy” distribution Gaussian functions are usually adopted. According to the experimental events, “size” Gaussian distribution functions are proposed to achieve better fittings.
Furthermore, the simulations of high speed modulation in nonidentical quantum wells and quantum dot laser diodes are also available in this thesis.
Subjects
量子點
雷射
二極體
砷化銦
增益
非平衡
聲子
縱向音聲子
縱向光聲子
捕捉
鬆弛
尺寸
能量
調變
quantum dot
laser
diode
InAs
gain
non-equilibrium
phonon
LA phonon
LO phonon
capture
relaxation
size
energy
Gaussian
modulation
Type
thesis
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