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  4. High Open-circuit Voltage Tandem a-SiC:H p-i-n Solar Cells for E-paper display device
 
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High Open-circuit Voltage Tandem a-SiC:H p-i-n Solar Cells for E-paper display device

Date Issued
2011
Date
2011
Author(s)
Ma, Ting-Yao
URI
http://ntur.lib.ntu.edu.tw//handle/246246/256800
Abstract
In this thesis, the structure, optical and electrical properties of the hydrogenated amorphous silicon carbide (a-SiC:H) thin films fabricated under 200℃ were investigated first, then these properties are compared to a-SiC:H thin films fabricated under 250℃ in order to understand the properties of a-SiC:H thin films fabricated under low temperature. Then, they are used to fabricate the amorphous silicon solar cells as the window material to obtain higher open-circuit voltage due to its wider optical gap. In order to develop the solar cell which can supply power of electric paper which is foldable, a triple-junction a-SiC:H p-i-n solar cell has been fabricated successfully on plastic substrate first. Then in order to enhance the performance of the solar cell on plastic substrate, surface texturing is used. A solar cell on Asahi-U substrate was fabricated to compare with a solar cell on flat substrate. In the next stage, a new method to fabricate textured surface on plastic substrate was used and a triple-junction a-SiC:H p-i-n solar cell was fabricated successfully on the textured plastic substrate. Its efficiency was increased 16.4% as compared to those on flat substrate.
Subjects
E-paper
High Open-circuit Voltage
Tandem
a-SiC:H
Solar Cell
Type
thesis
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ntu-100-R97943085-1.pdf

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