A miniature 25-GHz 9-dB CMOS cascaded single-stage distributed amplifier
Journal
IEEE Microwave and Wireless Components Letters
Journal Volume
14
Journal Issue
12
Pages
554-556
Date Issued
2004
Author(s)
Abstract
A 25-GHz complementery metal oxide semiconductor (CMOS) cascaded single-stage distributed amplifier (CSSDA) using standard 0.18- μm CMOS technology is presented in this letter. It demonstrates the highest gain-bandwidth product (GBP) with smallest chip area reported for a fully-integrated CMOS wideband amplifier using a standard Si-based integrated circuit process. The chip size including testing pads is only 0.36 mm 2, and the ratio of GBP to chip size achieves 552 GHz/mm 2. This circuit is the first CSSDA realized in CMOS technology, and represents state-of-the-art performances.
Subjects
Complementary metal oxide semiconductor (CMOS); Distributed amplifier; Helical inductor; Microwave monolithic integrated circuit (MMIC)
Type
journal article