Oxadiazole Derivatives Used as the Host of the Metal Doped Electron Transport Layer Material
Resource
Proceedings of SPIE 5937: 59371S
Journal
Proceedings of SPIE
Pages
-
Date Issued
2005
Date
2005
Author(s)
Teng, Hsu-Tun
Kafafi, Zakya H.
Lane, Paul A.
Wu, Meng-Hsiu
Chao, Chun-Chieh
Chen, Hung-Lin
Abstract
In this paper, we demonstrate device performances with cesium (Cs) doped in oxadiazole (OXD) derivatives as a metal-doped electron transport layer (MD-ETL). Cs is a heavy alkali atom and difficult to diffuse in an organic matrix. The metal quenching effect is therefore reduced in a long-term operation. Three different kinds of OXD-based organic materials were used. However, only one kind of OXDs can effectively improve the device performances. Such a host material exhibits advantages of high glass transition temperature (Tg) of 147 °C. The average roughness of the thin film is small hence the leakage current of the corresponding OLED devices is low. By using a highly reflective and conductive silver cathode, an OLED with a 2.59 V reduction in driving voltage, a 47.3% increase in current efficiency, and a 3.14 times enhancement in operation lifetime was demonstrated.
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Type
journal article
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