InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength = 2.38m
Journal
Electronics Letters
Journal Volume
37
Journal Issue
22
Pages
1342-1343
Date Issued
2001-10
Author(s)
Abstract
Application of a novel InAsN alloy on a laser device is reported for the first time. The four-period InAs0.97N0.03-In0.53Ga 0.47As-InP strained multiple quantum well laser, grown by gas source molecular beam epitaxy with an RF-coupled plasma nitrogen source, lased under pulsed operation at 2.38 μm at 260 K. A threshold current density of 3.6 KA/cm2 at 260 K and a characteristic temperature of 62 K have been achieved.
SDGs
Type
journal article