A Surface-Field-Based Model for Nanowire MOSFETs with Spatial Variations of Doping Profiles
Journal
IEEE Transactions on Electron Devices
Journal Volume
61
Journal Issue
12
Pages
4040-4046
Date Issued
2014-12
Author(s)
Abstract
We report a novel method to solve the nonlinear 1-D Poisson's equation for the gate-all-around (GAA) nanowire MOSFETs with nonuniform doping profiles. An algebraic relation between the electric field and potential is identified to develop a surface-field-based compact model. Drain current is derived from the oxide-interface boundary condition to avoid the complicated surface-potential approach. As verified by the TCAD simulations, this analytic model is capable of continuously covering all operating regions of GAA nanowire MOSFETs with slowly varying doping profiles.
SDGs
Type
journal article