Large grain poly-Si (?10 μm) TFTs prepared by excimer laser annealing through a thick SiON absorption layer
Journal
IEEE Transactions on Electron Devices
Journal Volume
51
Journal Issue
2
Pages
166-171
Date Issued
2004
Author(s)
Liu, S.-D.
Abstract
Poly-Si with large grain size of 10.4 × 4.4 μm2 was realized by excimer laser annealing (ELA) through the substrate and an 1 μm thick silicon oxynitride (SiON) absorption layer underlying the top amorphous silicon. Thin-film transistors (TFTs) can then be made on this single poly-Si grain and show good electrical performance.
Type
journal article