The poly-Si Thin Film Transistor and a-Si:H p-i-n Solar Cell for Energy-Recoverable Organic Light Emitting Diode
Date Issued
2005
Date
2005
Author(s)
Chen, Yen-Yu
DOI
en-US
Abstract
The performance of two devices, including a TFT with a a-Si:H solar cell on top and a TFT with a OLED on top, were studied in the thesis and a detailed fabrication processes of the energy-recoverable OLED were shown. Solar cell was introduced between thin film transistor (TFT) and organic light emitting diode (OLED) to solve the contrast problem. Through the new design, both the sun light and the emitted light can be absorbed by the solar cell and consequently the two kinds of recycled lights will be treated as a new energy to achieve the energy-recoverable OLED. The performance of a a-Si:H solar cell with and without TFT below it are compared: the power conversion efficiency of 2.25 % vs. 2.79 % under white light illumination. The electrical characteristic of TFT becomes better after depositing OLED on top. The a-Si1-xGe x:H films fabricated with different Ge fraction. After
analyzing the optical gap and the FTIR specta, the optimum x, 0.25, is determined.
Subjects
薄膜電晶體
有機發光二極體
太陽能電池
TFT
OLED
Solar Cell
Type
thesis
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