Dynamics carrier relaxation in InGaN/GaN multiple quantum well structures
Journal
Proceedings of SPIE-The International Society for Optical Engineering
Journal Volume
4643
Pages
169-172
Date Issued
2002
Author(s)
Feng, S.-W.
Cheng, Y.-C.
Chung, Y.-Y.
Liu, C.W.
Mao, M.-H.
Yang, C.-C.
Lin, Y.-S.
Ma, K.-J.
Abstract
We report the fast and slow decay lifetimes of multi-component photoluminescence (PL) intensity decays in the time-resolved photoluminescence measurements at the room temperature and a low temperature (12K). The fast decay component was essentially due to carrier dynamics, that is, carrier transport from weakly localized to localized states. Such a carrier transport process results in extremely long PL decay time (up to almost 120 ns) for strongly localized states at the low temperature. At room temperature, because of thermal energy and hence carrier escape from strongly localized states, effective lifetimes becomes shorter. © 2002 SPIE · 0277-786X/02/$15.00.
SDGs
Type
journal article