Mobility Study of Polycrystalline MgZnO/ZnO Thin Film Layers with Monte Carlo Method
Date Issued
2009
Date
2009
Author(s)
Huang, Chih-I
Abstract
The study of transparent conducting oxide (TCO) and thin film transistor (TFT) has become an important area due to the applications of lighting and display technology. Therefore, finding a high mobility and conductivity TCO materials would be a key issue to the industry. In this paper, we have applied the Monte Carlo method to analyze the mobility of single and poly-crystalline MgZnO/ZnO thin film layer. The effects of grain boundary scattering, ionized impurity scattering, phonon scattering as well as alloy scattering have been included in our program. The grain boundary potential, the grain boundary size and carrier screening effect has been analyzed with our developed 2D Poisson and drift-diffusion solver. The critical depth of the MgZnO layer is also presented in our study. With a careful design of modulation doping and including the effect of spontaneous and piezoelectric polarization, the grain boundary potential can be suppressed and thus the mobility of the ZnO layer can be improved.
Subjects
MgZnO
ZnO
heterostructure
Monte Carlo Method
piezoelectric polarization
grain boundary
mobility
Type
thesis
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