Electro-Optical Properties of Nano-structured Indium Nitride
Date Issued
2006
Date
2006
Author(s)
Yu, Chia-Ju
DOI
en-US
Abstract
We have studied optical, transport, and photoelectric properties on dimensionality of one-dimensional (1D) nanostructure of InN. Single-crystalline InN nanobelts with wurtize structure have been synthesized using metalorganic chemical vapor deposition (MOCVD). The fabrication of single nanobelt device has been also demonstrated. For optical measurement, we found that the photoluminescence (PL) peak position of the samples is observed at around 0.84 eV at 20 K. In addition, the PL peak position reveals anomalous blueshift as temperature increases from 20K to 100K and then follows redshift from 100K to 300K due to normal bandgap shrinkage. The PL emission mechanism in InN nanobelts can be explained by the combination of the model of free-to-bound recombination and electron surface accumulation. The high carrier concentration of InN nanobelts in the range of 2.7x1019 1.65x1020 cm-3 has been further manifested by the study of plasma edge absorption in the Fourier Transform Infrared (FTIR) examination. For electrical measurement, the overall conductivity of the nanobelts is in the range of 50 8000 -1cm-1. The temperature dependence of dark conductivity has indicated the metallic transport behavior of the single InN nanobelt. Size-dependent hotoconductivity (PC) has been observed on the InN nanobelts and the maximal photocurrent responsivity reaching to 1000 A/W has been demonstrated for the first time. It is found that the responsivity has increased significantly as nanobelt size increases from 60 to 230 nm. The size-effect on the PC performance could be explained by the electron surface accumulation in the size-confined 1D nanostructure of InN giving rise to shorter lifetime and lower mobility of carrier.
Subjects
氮化銦
表面電子累積
光致發光
光導
indium nitride
surface accumulation
photoluminescence
photoconductivity
Type
thesis
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